BA15P26B Datasheet, Equivalent, Cross Reference Search
Type Designator: BA15P26B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 600(max) pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO-3PB TO3PL
BA15P26B Transistor Equivalent Substitute - Cross-Reference Search
BA15P26B Datasheet (PDF)
ba15n26b ba15p26b.pdf
Complementary NPN-PNP Power Bipolar Transistor R BA15N26B(NPN) BA15P26B(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =260V (min) High collector voltageV =260V (min) CEO CEONPN-PNP Complementary NPN
ba15n26a ba15p26a.pdf
Power Amplifier Applications Bipolar Transistortor RBA15N26A BA15P26A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =260V (min) High collector voltageV =260V (
ba15n23a ba15p23a.pdf
Power Amplifier Applications Bipolar Transistortors RBA15N23A BA15P23A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =230V (min) High collector voltageV =230V
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