BA16N25A PDF and Equivalents Search

 

BA16N25A Specs and Replacement


   Type Designator: BA16N25A
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 500(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO-3PLT
 

 BA16N25A Substitution

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BA16N25A datasheet

 ..1. Size:1078K  jilin sino
ba16n25a ba16p25a.pdf pdf_icon

BA16N25A

Complementary NPN-PNP Power Bipolar Transistor R BA16N25A(NPN) BA16P25A(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN... See More ⇒

 9.1. Size:169K  ixys
ixba16n170ahv.pdf pdf_icon

BA16N25A

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM... See More ⇒

Detailed specifications: 3DD5605Z , 3DFH3504Z , BA15N23A , BA15N26A , BA15N26B , BA15P23A , BA15P26A , BA15P26B , 2SD313 , BA16P25A , BL10N15A , BL10P15A , BL15N15A , BL15P15A , BM03N05 , BM03P05 , BM05N06B .

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