All Transistors. BA16N25A Datasheet


BA16N25A Datasheet, Equivalent, Cross Reference Search

   Type Designator: BA16N25A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 500(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO-3PLT

 BA16N25A Transistor Equivalent Substitute - Cross-Reference Search


BA16N25A Datasheet (PDF)

 ..1. Size:1078K  jilin sino
ba16n25a ba16p25a.pdf


Complementary NPN-PNP Power Bipolar Transistor R BA16N25A(NPN) BA16P25A(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN

 9.1. Size:169K  ixys


Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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