BA16N25A Datasheet. Specs and Replacement
Type Designator: BA16N25A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 max pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO-3PLT
📄📄 Copy
BA16N25A Substitution
- BJT ⓘ Cross-Reference Search
BA16N25A datasheet
Complementary NPN-PNP Power Bipolar Transistor R BA16N25A(NPN) BA16P25A(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN... See More ⇒
Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM... See More ⇒
Detailed specifications: 3DD5605Z, 3DFH3504Z, BA15N23A, BA15N26A, BA15N26B, BA15P23A, BA15P26A, BA15P26B, BD223, BA16P25A, BL10N15A, BL10P15A, BL15N15A, BL15P15A, BM03N05, BM03P05, BM05N06B
Keywords - BA16N25A pdf specs
BA16N25A cross reference
BA16N25A equivalent finder
BA16N25A pdf lookup
BA16N25A substitution
BA16N25A replacement
