2SA1302O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1302O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 470 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3PL
2SA1302O Transistor Equivalent Substitute - Cross-Reference Search
2SA1302O Datasheet (PDF)
2sa1302.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
2sa1302.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
