All Transistors. 2SA1358O Datasheet

 

2SA1358O Datasheet and Replacement


   Type Designator: 2SA1358O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO126
 

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2SA1358O Datasheet (PDF)

 7.1. Size:178K  toshiba
 2sa1358.pdf pdf_icon

2SA1358O

 7.2. Size:222K  inchange semiconductor
 2sa1358-z.pdf pdf_icon

2SA1358O

isc Silicon PNP Power Transistor 2SA1358-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 7.3. Size:196K  inchange semiconductor
 2sa1358.pdf pdf_icon

2SA1358O

isc Silicon PNP Power Transistor 2SA1358DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOComplement to Type 2SC3421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

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Datasheet: 2SA1355 , 2SA1356 , 2SA1356O , 2SA1356Y , 2SA1357 , 2SA1357O , 2SA1357Y , 2SA1358 , BC549 , 2SA1358Y , 2SA1359 , 2SA1359O , 2SA1359Y , 2SA136 , 2SA1360 , 2SA1360O , 2SA1360Y .

History: 2SA1406F | GT402A | 2SCR502U3HZG | BC303-5 | PTB20191 | BC231Y | 2SB136

Keywords - 2SA1358O transistor datasheet

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