All Transistors. 2SA1359O Datasheet

 

2SA1359O Datasheet and Replacement


   Type Designator: 2SA1359O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO126
 

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2SA1359O Datasheet (PDF)

 7.1. Size:179K  toshiba
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2SA1359O

 7.2. Size:200K  jmnic
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2SA1359O

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolu

 7.3. Size:249K  lzg
2sa1359 3ca1359.pdf pdf_icon

2SA1359O

2SA1359(3CA1359) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier and low speed switching applications. : 2SC3422(3DA3422) Features: Good linearity of h ,complementary to 2SC3422(3DA3422). FE/Absolute maximum ratings(Ta=25)

 7.4. Size:196K  inchange semiconductor
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2SA1359O

isc Silicon PNP Power Transistor 2SA1359DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3422Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB1206 | 2N5130 | PT23T3904

Keywords - 2SA1359O transistor datasheet

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