2SA1359O Specs and Replacement
Type Designator: 2SA1359O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO126
2SA1359O Substitution
- BJT ⓘ Cross-Reference Search
2SA1359O datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolu... See More ⇒
isc Silicon PNP Power Transistor 2SA1359 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3422 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25... See More ⇒
Detailed specifications: 2SA1356Y, 2SA1357, 2SA1357O, 2SA1357Y, 2SA1358, 2SA1358O, 2SA1358Y, 2SA1359, TIP142, 2SA1359Y, 2SA136, 2SA1360, 2SA1360O, 2SA1360Y, 2SA1361, 2SA1362, 2SA1363
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