2SA1359O Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1359O  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO126

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2SA1359O datasheet

 7.1. Size:179K  toshiba
 2sa1359.pdf pdf_icon

2SA1359O

 7.2. Size:200K  jmnic
 2sa1359.pdf pdf_icon

2SA1359O

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolu

 7.3. Size:249K  lzg
 2sa1359 3ca1359.pdf pdf_icon

2SA1359O

 7.4. Size:196K  inchange semiconductor
 2sa1359.pdf pdf_icon

2SA1359O

isc Silicon PNP Power Transistor 2SA1359 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3422 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

MOSTRAR MÁS

Otros transistores... 2SA1356Y, 2SA1357, 2SA1357O, 2SA1357Y, 2SA1358, 2SA1358O, 2SA1358Y, 2SA1359, 2N2907, 2SA1359Y, 2SA136, 2SA1360, 2SA1360O, 2SA1360Y, 2SA1361, 2SA1362, 2SA1363