All Transistors. 2SA1693P Datasheet

 

2SA1693P Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1693P
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO3P

 2SA1693P Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1693P Datasheet (PDF)

 7.1. Size:123K  utc
2sa1693.pdf

2SA1693P
2SA1693P

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

 7.2. Size:191K  jmnic
2sa1693.pdf

2SA1693P
2SA1693P

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.3. Size:27K  sanken-ele
2sa1693.pdf

2SA1693P

2SA1693Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 80 V ICBO VCB=80V 10max A 0.19.6 2.0IEBOVCEO 80 V VEB=6V

 7.4. Size:222K  inchange semiconductor
2sa1693.pdf

2SA1693P
2SA1693P

isc Silicon PNP Power Transistor 2SA1693DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4466Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 2SA1688-5 , 2SA1689 , 2SA168A , 2SA169 , 2SA1690 , 2SA1692 , 2SA1693 , 2SA1693O , D209L , 2SA1693Y , 2SA1694 , 2SA1694O , 2SA1694P , 2SA1694Y , 2SA1695 , 2SA1695O , 2SA1695P .

 

 
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