2SA221
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA221
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.01
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 25
MHz
Collector Capacitance (Cc): 4
pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package:
TO44
2SA221
Transistor Equivalent Substitute - Cross-Reference Search
2SA221
Datasheet (PDF)
0.1. Size:165K toshiba
2sa2219.pdf
2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
0.2. Size:125K toshiba
2sa2215.pdf
2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 32Absolute Maximum Rati
0.3. Size:126K toshiba
2sa2214.pdf
2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 32Absolute Maximum Rati
0.4. Size:53K sanyo
2sa2210.pdf
Ordering number : ENA0667 2SA2210SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2210High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute M
0.5. Size:241K onsemi
2sa2210.pdf
Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa
0.6. Size:176K onsemi
2sa2210-1e.pdf
Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa
0.7. Size:218K inchange semiconductor
2sa2210.pdf
isc Silicon PNP Power Transistor 2SA2210DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-Em
Datasheet: 2SA1771
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