2SA473G Specs and Replacement
Type Designator: 2SA473G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO202
2SA473G Transistor Equivalent Substitute - Cross-Reference Search
2SA473G detailed specifications
2sa473.pdf
2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun... See More ⇒
Detailed specifications: 2SA467G , 2SA468 , 2SA469 , 2SA47 , 2SA470 , 2SA471 , 2SA472 , 2SA473 , 2N5401 , 2SA473O , 2SA473R , 2SA473Y , 2SA474 , 2SA475 , 2SA476 , 2SA477 , 2SA478 .
History: CSB856 | UMH8N | CSB507D | 2SB744A
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