All Transistors. 2SA475 Datasheet

 

2SA475 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA475

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 12 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

2SA475 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA475 Datasheet (PDF)

9.1. 2sa473.pdf Size:69K _wingshing

2SA475

2SA473 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun

9.2. 2sa473.pdf Size:221K _inchange_semiconductor

2SA475 2SA475

isc Silicon PNP Power Transistor 2SA473DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1173Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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