All Transistors. 2SA496 Datasheet

 

2SA496 Datasheet and Replacement


   Type Designator: 2SA496
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
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2SA496 Datasheet (PDF)

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2SA496

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2SA496

isc Silicon PNP Power Transistor 2SA496DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -30V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

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2SA496

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2SA496

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History: DDTA123TKA | 2N3183 | MM4019 | 2N2473 | BF420A | BTB1424AT3 | 2SB1144S

Keywords - 2SA496 transistor datasheet

 2SA496 cross reference
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