2SA496 - Даташиты. Аналоги. Основные параметры

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isc Silicon PNP Power Transistor 2SA496DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -30V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

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JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION With TO-220 package Complement to type 2SC790 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Power Transistor 2SA490DESCRIPTIONHigh Collector Current:: I = -3ACCollector-Emitter Breakdown Voltage: V = -40V(Min)(BR)CEOComplement to Type 2SC790Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS10 Watts output applicationsPower amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO