All Transistors. 2SA506 Datasheet

 

2SA506 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA506

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

2SA506 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA506 Datasheet (PDF)

 9.1. Size:756K  1
2sa509.pdf

2SA506
2SA506

 9.2. Size:94K  toshiba
2sa496 2sa505.pdf

2SA506
2SA506

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA506
2SA506

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
2sa505.pdf

2SA506
2SA506

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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