All Transistors. 2SA627 Datasheet

 

2SA627 Datasheet and Replacement


   Type Designator: 2SA627
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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2SA627 Datasheet (PDF)

 ..1. Size:145K  jmnic
 2sa627.pdf pdf_icon

2SA627

JMnic Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-7A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 ..2. Size:215K  inchange semiconductor
 2sa627.pdf pdf_icon

2SA627

isc Silicon PNP Power Transistors 2SA627DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

 9.1. Size:145K  jmnic
 2sa626.pdf pdf_icon

2SA627

JMnic Product Specification Silicon PNP Power Transistors 2SA626 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-6A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.2. Size:212K  inchange semiconductor
 2sa626.pdf pdf_icon

2SA627

isc Silicon PNP Power Transistors 2SA626DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB178B | 2SA651 | 2SB193 | NB012EY | 2SB178A | 2SC3896 | NB021EI

Keywords - 2SA627 transistor datasheet

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