2SA634Z Datasheet. Specs and Replacement
Type Designator: 2SA634Z 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO202
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2SA634Z Substitution
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2SA634Z datasheet
Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION With TO-202 package Complement to type 2SC1096 High current capability APPLICATIONS Audio frequency power amplifier Low speed switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratin... See More ⇒
Detailed specifications: 2SA627, 2SA628, 2SA628A, 2SA629, 2SA631, 2SA633, 2SA634, 2SA634L, 8050, 2SA635, 2SA636, 2SA636A, 2SA636L, 2SA636Z, 2SA637, 2SA638, 2SA638S
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BJT Parameters and How They Relate
History: ECG12 | UN9215R | HB857 | BLD132D | UN9212 | E20237 | 2SB934
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