All Transistors. 2SA635 Datasheet

 

2SA635 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA635
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO202

 2SA635 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA635 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
2sa635.pdf

2SA635
2SA635

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA635DESCRIPTIONWith TO-202 packageHigh current capabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6

 9.1. Size:47K  no
2sa634.pdf

2SA635

 9.2. Size:150K  jmnic
2sa636 2sa636a.pdf

2SA635
2SA635

JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202)

 9.3. Size:122K  jmnic
2sa634.pdf

2SA635

Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju

 9.4. Size:109K  jmnic
2sa633.pdf

2SA635

Power Transistors www.jmnic.com2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun

 9.5. Size:146K  inchange semiconductor
2sa636 2sa636a.pdf

2SA635
2SA635

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified

 9.6. Size:146K  inchange semiconductor
2sa634.pdf

2SA635
2SA635

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION With TO-202 package Complement to type 2SC1096 High current capability APPLICATIONS Audio frequency power amplifier Low speed switching PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratin

 9.7. Size:137K  inchange semiconductor
2sa633.pdf

2SA635
2SA635

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION With TO-202 package High current capability APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

Datasheet: 2SA628 , 2SA628A , 2SA629 , 2SA631 , 2SA633 , 2SA634 , 2SA634L , 2SA634Z , TIP127 , 2SA636 , 2SA636A , 2SA636L , 2SA636Z , 2SA637 , 2SA638 , 2SA638S , 2SA639 .

 

 
Back to Top