2SA642 Datasheet. Specs and Replacement
Type Designator: 2SA642
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Package: TO92
2SA642 Substitution
- BJT ⓘ Cross-Reference Search
2SA642 datasheet
isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
Detailed specifications: 2SA637, 2SA638, 2SA638S, 2SA639, 2SA639S, 2SA64, 2SA640, 2SA641, 2SB817, 2SA643, 2SA645, 2SA646, 2SA647, 2SA648, 2SA649, 2SA65, 2SA650
Keywords - 2SA642 pdf specs
2SA642 cross reference
2SA642 equivalent finder
2SA642 pdf lookup
2SA642 substitution
2SA642 replacement



