2SA649 Datasheet. Specs and Replacement

Type Designator: 2SA649

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 2SA649 Substitution

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2SA649 datasheet

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2SA649

isc Silicon PNP Power Transistor 2SA649 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

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Detailed specifications: 2SA640, 2SA641, 2SA642, 2SA643, 2SA645, 2SA646, 2SA647, 2SA648, 2N4401, 2SA65, 2SA650, 2SA651, 2SA652, 2SA653, 2SA653A, 2SA656, 2SA656A

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