All Transistors. 2SA649 Datasheet

 

2SA649 Datasheet and Replacement


   Type Designator: 2SA649
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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2SA649 Datasheet (PDF)

 ..1. Size:189K  inchange semiconductor
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2SA649

isc Silicon PNP Power Transistor 2SA649DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 9.1. Size:39K  no
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2SA649

 9.2. Size:82K  usha
 2sa642.pdf pdf_icon

2SA649

Transistors2SA642

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 2sa643.pdf pdf_icon

2SA649

Transistors2SA643

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Keywords - 2SA649 transistor datasheet

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