2SA70 Datasheet. Specs and Replacement

Type Designator: 2SA70  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO7

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isc Silicon PNP Power Transistor 2SA700 DESCRIPTION High Collector Current -I = -1.5A C Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

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Detailed specifications: 2SA685, 2SA69, 2SA695, 2SA696, 2SA697, 2SA698, 2SA699, 2SA699A, 13007, 2SA700, 2SA701, 2SA701NP, 2SA702, 2SA702NP, 2SA703, 2SA704, 2SA706

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