All Transistors. 2SA817AO Datasheet

 

2SA817AO Datasheet and Replacement


   Type Designator: 2SA817AO
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

 2SA817AO Substitution

   - BJT ⓘ Cross-Reference Search

   

2SA817AO Datasheet (PDF)

 7.1. Size:173K  toshiba
 2sa817a.pdf pdf_icon

2SA817AO

 7.2. Size:232K  lge
 2sa817a to-92mod.pdf pdf_icon

2SA817AO

2SA817A TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.4008.800 Complementary to 2SC1627A. 0.9001.100 Driver Stage Application of 30 to 0.4000.60035 Watts Amplifiers. 13.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.1000.000 1.600

 8.1. Size:209K  toshiba
 2sa817.pdf pdf_icon

2SA817AO

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEB

SHOW MORE

Datasheet: 2SA813S2 , 2SA813S3 , 2SA813S4 , 2SA814 , 2SA815 , 2SA816 , 2SA817 , 2SA817A , AC125 , 2SA817AY , 2SA818 , 2SA819 , 2SA82 , 2SA820 , 2SA821 , 2SA822 , 2SA823 .

Keywords - 2SA817AO transistor datasheet

 2SA817AO cross reference
 2SA817AO equivalent finder
 2SA817AO lookup
 2SA817AO substitution
 2SA817AO replacement

 

 
Back to Top

 


 
.