2SA965O Specs and Replacement
Type Designator: 2SA965O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO92
2SA965O Substitution
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2SA965O datasheet
2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications B CLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y K E F Range 80-160 120-240 C N G H 1 Emitter 1 1 1 2 Collector 2 ... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA965 DESCRIPTION Power amplifier applications Driver stage amplifier applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB... See More ⇒
Detailed specifications: 2SA959, 2SA96, 2SA962, 2SA962A, 2SA963, 2SA964, 2SA964A, 2SA965, BC337, 2SA965Y, 2SA966, 2SA966O, 2SA966Y, 2SA967, 2SA968, 2SA968A, 2SA968B
Keywords - 2SA965O pdf specs
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