All Transistors. 2SA965O Datasheet

 

2SA965O Datasheet and Replacement


   Type Designator: 2SA965O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92
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2SA965O Datasheet (PDF)

 8.1. Size:173K  toshiba
 2sa965.pdf pdf_icon

2SA965O

 8.2. Size:78K  secos
 2sa965tm.pdf pdf_icon

2SA965O

2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications BCLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y KE FRange 80-160 120-240 CNG H1 Emitter 1112 Collector 2

 8.3. Size:213K  inchange semiconductor
 2sa965.pdf pdf_icon

2SA965O

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA965DESCRIPTIONPower amplifier applicationsDriver stage amplifier applicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

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Datasheet: 2SA959 , 2SA96 , 2SA962 , 2SA962A , 2SA963 , 2SA964 , 2SA964A , 2SA965 , BD140 , 2SA965Y , 2SA966 , 2SA966O , 2SA966Y , 2SA967 , 2SA968 , 2SA968A , 2SA968B .

History: BR3DD13009X7R | WBR13003B2 | 2N3394 | 2SA1943R | LBC559C | WBR13003B3 | 2SD665

Keywords - 2SA965O transistor datasheet

 2SA965O cross reference
 2SA965O equivalent finder
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