2SB1019O Specs and Replacement
Type Designator: 2SB1019O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SB1019O Substitution
- BJT ⓘ Cross-Reference Search
2SB1019O datasheet
isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1412 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: 2SB1017, 2SB1017O, 2SB1017R, 2SB1017Y, 2SB1018, 2SB1018O, 2SB1018Y, 2SB1019, BC557, 2SB1019Y, 2SB102, 2SB1020, 2SB1021, 2SB1022, 2SB1023, 2SB1024, 2SB1025
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