All Transistors. 2SB1019Y Datasheet

 

2SB1019Y Datasheet and Replacement


   Type Designator: 2SB1019Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
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2SB1019Y Datasheet (PDF)

 7.1. Size:45K  no
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2SB1019Y

 7.2. Size:156K  jmnic
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2SB1019Y

JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

 7.3. Size:216K  inchange semiconductor
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2SB1019Y

isc Silicon PNP Power Transistor 2SB1019DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1412Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

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Keywords - 2SB1019Y transistor datasheet

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