2SB1136Q Specs and Replacement
Type Designator: 2SB1136Q
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220F
2SB1136Q Substitution
- BJT ⓘ Cross-Reference Search
2SB1136Q datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -6A CE(sat) C Complement to Type 2SD1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inver... See More ⇒
Detailed specifications: 2SB1134Q, 2SB1134R, 2SB1134S, 2SB1135, 2SB1135Q, 2SB1135R, 2SB1135S, 2SB1136, S8050, 2SB1136R, 2SB1136S, 2SB1137, 2SB114, 2SB1140, 2SB1140R, 2SB1140S, 2SB1140T
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