2N1495 Datasheet and Replacement

   Type Designator: 2N1495
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO5
     - BJT ⓘ Cross-Reference Search