All Transistors. 2SB1165T Datasheet

 

2SB1165T Datasheet and Replacement


   Type Designator: 2SB1165T
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO126
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2SB1165T Datasheet (PDF)

 7.1. Size:124K  sanyo
 2sb1165.pdf pdf_icon

2SB1165T

 7.2. Size:157K  jmnic
 2sb1165.pdf pdf_icon

2SB1165T

JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

 7.3. Size:218K  inchange semiconductor
 2sb1165.pdf pdf_icon

2SB1165T

isc Silicon PNP Power Transistor 2SB1165DESCRIPTIONLow Collector Saturation Voltage-: V = -0.55V(Max)@I = -3ACE(sat) CHigh fTGood Linearity of hFEFast switching timeComplement to Type 2SD1722Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters andconverters applica

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: BF316A | 2N2249 | BD130 | 2SD1866 | 2SB204 | BC547A

Keywords - 2SB1165T transistor datasheet

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