2SB1165T pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SB1165T Specs and Replacement

Type Designator: 2SB1165T

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO126

2SB1165T Substitution

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2SB1165T datasheet

7.1. Size:124K sanyo

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7.2. Size:157K jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings... See More ⇒

7.3. Size:218K inchange semiconductor

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isc Silicon PNP Power Transistor 2SB1165 DESCRIPTION Low Collector Saturation Voltage- V = -0.55V(Max)@I = -3A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applica... See More ⇒

Detailed specifications: 2SB1161, 2SB1162, 2SB1163, 2SB1164, 2SB1165, 2SB1165Q, 2SB1165R, 2SB1165S, 2N4401, 2SB1166, 2SB1166Q, 2SB1166R, 2SB1166S, 2SB1166T, 2SB1167, 2SB1167Q, 2SB1167R