2SB1558B Datasheet and Replacement
Type Designator: 2SB1558B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 9
Noise Figure, dB: -
Package: TO264
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2SB1558B Datasheet (PDF)
2sb1558.pdf

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER COND
2sb1558.pdf

isc Silicon PNP Darlington Power Transistor 2SB1558DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATING
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | GE10006
Keywords - 2SB1558B transistor datasheet
2SB1558B cross reference
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History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | GE10006



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