BUZ45 MOSFET Datasheet: N-Ch, 500V, 9.6A. Full specification with pinout and replacement list

BUZ45 Specs and Replacement

   Type Designator: BUZ45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id| ⓘ - Maximum Drain Current: 9.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3

BUZ45 substitution

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BUZ45 datasheet

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ45 FEATURES Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay... See More ⇒

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BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,... See More ⇒