View 2sj347 datasheet:

2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications � Low threshold voltage: Vth = -0.5~-1.5 V � High speed � Small package � Complementary to 2SK1830 Marking Equivalent Circuit Maximum Ratings (Ta = = 25�C) = = JEDEC ? Characteristics Symbol Rating Unit JEITA ? Drain-source voltage VDS -20 V TOSHIBA 2-2H1B Gate-source voltage VGSS -7 V Weight: 2.4 mg (typ.) DC drain current ID -50 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 �C Storage temperature range Tstg -55~150 �C Electrical Characteristics (Ta = = 25�C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V, VDS = 0 ? ? -1 �A Drai