View 2sj610 datasheet:

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications � Low drain-source ON resistance: RDS (ON) = 1.85 ? (typ.) � High forward transfer admittance: |Y | = 18 S (typ.) fs � Low leakage current: I = -100 �A (V = -250 V) DSS DS � Enhancement-mode: V = -1.5~-3.5 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Tc = = 25�C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -250 V Drain-gate voltage (RGS = 20 k?) VDGR -250 V Gate-source voltage VGSS �20 V DC (Note 1) ID -2.0 Drain current A Pulse (t = 1 ms) IDP -4.0 (Note 1) JEDEC ? Drain power dissipation PD 20 W JEITA SC-64 Single pulse avalanche energy EAS 180 mJ TOSHIBA 2-7B1B