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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2464

Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2128 � Enables simplified fabrication, high-density mound- [2SK2464] ing, and miniaturization in end products due to the 8.2 surface mountable package. 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS �20 V Drain Current (DC) ID 45 A Drain Current (Pulse) IDP PW? 10� s, duty cycle? 1% 180 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C

Keywords

 2sk2464 Datasheet, Design, MOSFET, Power

 2sk2464 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2464 Database, Innovation, IC, Electricity

 

 
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