View 2sk2825 datasheet:

2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications � High input impedance � 1.5 V gate drive � Low gate threshold voltage: V = 0.5~1.0 V th � Small package Marking Equivalent Circuit Maximum Ratings (Ta = = 25�C) = = JEDEC ? JEITA ? Characteristics Symbol Rating Unit TOSHIBA 2-2H1B Drain-source voltage VDS 20 V Weight: 2.4 mg (typ.) Gate-source voltage VGSS 10 V DC drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 �C Storage temperature range Tstg -55~150 �C Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2003-03-27 2SK2825 Electrical Characteristics