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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2961

2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2961 Relay Drive, Motor Drive and DC-DC Converter Application Unit: mm Low drain-source ON resistance : RDS (ON) = 0.2 ? (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 �A (VDS = 60 V) Enhancement-mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS �20 V DC (Note 1) ID 2.0 Drain current A Pulse (Note 1) IDP 6.0 Drain power dissipation PD 0.9 W Channel temperature Tch 150 �C Storage temperature range Tstg -55~150 �C JEDEC TO-92MOD Thermal Characteristics JEITA �

Keywords

 2sk2961 Datasheet, Design, MOSFET, Power

 2sk2961 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2961 Database, Innovation, IC, Electricity

 

 
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