View bsp3081 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Preliminary data BSP308 SIPMOS? Small-Signal-Transistor Features Product Summary � N-Channel Drain source voltage VDS 30 V � Enhancement mode Drain-Source on-state resistance RDS(on) 0.05 ? � Logic Level Continuous drain current ID 4.7 A � dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2/4 PIN 3 BSP308 SOT-223 Q67000-S4011 G D S Maximum Ratings,at Tj = 25 �C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID A TA = 25 �C 4.7 TA = 70 �C 3.9 Pulsed drain current ID puls 18.8 TA = 25 �C Reverse diode dv/dt dv/dt 6 kV/�s IS = 4.7 A, VDS = 20 V, di/dt = 200 A/�s, Tjmax = 150 �C Gate source voltage VGS �20 V Power dissipation Ptot 1.8 W TA = 25 �C Operating and storage temperature Tj , Tstg -55...+150 �C IEC cli
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bsp3081 Datasheet, Design, MOSFET, Power
bsp3081 RoHS, Compliant, Service, Triacs, Semiconductor
bsp3081 Database, Innovation, IC, Electricity
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