View irll3303 datasheet:

PD- 91379C IRLL3303 HEXFET� Power MOSFET Surface Mount D Dynamic dv/dt Rating VDSS = 30V Logic-Level Gate Drive Fast Switching RDS(on) = 0.031? Ease of Paralleling G Advanced Process Technology ID = 4.6A Ultra Low On-Resistance S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. SOT-223 Its unique pac