View mmbr5179 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR5179LT1/D The RF Line NPN Silicon MMBR5179LT1 High-Frequency Transistor Designed for small�signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin�film circuits using surface mount components. � High Gain � Gpe = 15 dB Typ @ f = 200 MHz � Low Noise � NF = 4.5 dB Typ @ f = 200 MHz RF AMPLIFIER TRANSISTOR � Available in tape and reel packaging options: NPN SILICON T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Symbol Value Unit Collector�Emitter Voltage VCEO 12 Vdc Collector�Base Voltage VCBO 20 Vdc Emitter�Base Voltage VEBO 2.5 Vdc Collector Current � Continuous IC 50 mAdc Maximum Junction Temperature TJmax 150 �C Power Dissipation, Tcase = 75�C (1) PD(ma