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View psmn040-200w 2 datasheet:

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psmn040-200w_2

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 50 A g RDS(ON) ? 40 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain Applications:- 3 source • d.c. to d.c. converters 2 • switched mode power supplies tab drain 1 3 The PSMN040-200W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMET

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 psmn040-200w 2 Datasheet, Design, MOSFET, Power

 psmn040-200w 2 RoHS, Compliant, Service, Triacs, Semiconductor

 psmn040-200w 2 Database, Innovation, IC, Electricity

 

 
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