View psmn040-200w 2 datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA � �Trench� technology d � Very low on-state resistance VDSS = 200 V � Fast switching � Low thermal resistance ID = 50 A g RDS(ON) ? 40 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain Applications:- 3 source � d.c. to d.c. converters 2 � switched mode power supplies tab drain 1 3 The PSMN040-200W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMET