View ssd2009 sam datasheet:

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 6 S2 3 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2009 50V 0.13 3.0A N -Channel MOSFET Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 50 Continuous Drain Current TA=25 3.0 ID A Continuous Drain Current TA=70 2.3 IDM Drain Current-Pulsed 10.0 A VGS Gate-to-Source Voltage 20 V Total Power Dissipation ( TA=25 ) 2.0 PD W ( TA=70 ) 1.3 TJ , TSTG Operating and Junction Storage - 55 to +150 Temperature Range Thermal Resistance Symbol Chara