View stge50nb60hd datasheet:

STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESH� IGBT TYPE VCES VCE(sat) IC STGY50NB60HD 600 V < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION ISOTOP CO-PACKAGED WITH TURBOSWITCH� ANTIPARALLEL DIODE DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH� IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequen-cy applications (up to 120kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICAT