View baw156 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Silicon Low Leakage Diode Array BAW 156 Low-leakage applications Medium speed switching times Common anode Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAW 156 JZs Q62702-A922 SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 �s IFS 4.5 A Total power dissipation, TS =35?C Ptot 250 mW Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient2) Rth JA ? 600 K/W Junction - soldering point Rth JS ? 460 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 BAW 156 Electrical Character
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baw156 Datasheet, Design, MOSFET, Power
baw156 RoHS, Compliant, Service, Triacs, Semiconductor
baw156 Database, Innovation, IC, Electricity
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