View g80n60ufd datasheet:

 IGBT SGH80N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : trr = 50ns (typ.) a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-3P E E G C E www.DataSheet.net/ Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description SGH80N60UFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V