2SC47 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm High Voltage: VCEO = 50 V High Current: I = 150 mA (max) C High h : h = 120 to 400 FE FE Excellent h Linearity FE: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SA1832FT Maximum Rat

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO

2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120~700 Complementary to 2SA1832 Small package Absolute Maximu

2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 120~400 FE: FE Complementary to 2SA1832F Small package Maximu

Ordering number:EN3688ANPN Triple Diffused Planar Silicon Transistor2SC47102100V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (typical Cob=1.3pF).2079B Wide ASO.[2SC4710] High reliability (Adoption of HVP process).4.510.02.8 Full isolation packag

Ordering number:EN3974NPN Epitaxial Planar Silicon Transistor2SC473527MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Large power type such as PC=1.5W when usedunit:mmwithout heatsink.2084B It is possible to make appliances more compact[2SC4735]because its height on board is 9.5mm.4.51.9 2.6 Effective in automatic inserting and counting sto

Ordering number:EN3872PNP/NPN Epitaxial Planar Silicon Transistors2SA1824/2SC472850V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1824/2SC4728]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce

Ordering number:ENN3880ANPN Epitaxial Planar Silicon Transistor2SC473750V/2A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2084B[2SC4737]4.5Features1.9 2.610.51.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle

Ordering number:EN3878PNP/NPN Epitaxial Planar Silicon Transistors2SA1826/2SC4730100V/3A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1826/2SC4730]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exc

Ordering number:EN3484NPN Epitaxial Planar Silicon Transistor2SC4705Low-Frequency General-Purpose Amplifier,Applications (High hFE)Applications Package Dimensions Low-frequency general-purpose amplifier, drivers,unit:mmmuting circuits.2038A[2SC4705]Features 4.51.51.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage :VCE

Ordering number:ENN3879APNP/NPN Epitaxial Planar Silicon Transistors2SA1827/2SC4731100V/4A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applicaions.2084B[2SA1827/2SC4731]4.5Features1.9 2.610.51.2 1.4 Low collector-to-emitter saturation voltage. High G

Ordering number : ENN3688B2SC4710LSNPN Triple Diffused Planar Silicon Transistor2SC4710LS2100V / 10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=2100V).unit : mm Small Cob(typical Cob=1.3pF).2079D Wide ASO.[2SC4710LS] High reliability(Adoption of HVP process).10.0 4.53.22.8

Ordering number:EN3975NPN Epitaxial Planar Silicon Transistor2SC4736High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Large current (IC=2A).unit:mm Adoption of MBIT process.2084B High DC current gain (hFE=800 to 3200).[2SC4736] Low collector-to-emitter saturation voltage4.51.9 2.6(VCE(sat) 0.5V). 10.51.2 1.4

Ordering number:EN3871NPN Epitaxial Planar Silicon Transistor2SC472720V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2084B Fast switching speed.[2SC4727] Large current capacity.4.51.9 2.610.5 It is possible to make appliances more compact1.2 1.4because its height on board is 9.5mm.

Ordering number:EN3665NPN Triple Diffused Planar Silicon Transistor2SC4769Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4769] Adoption of MBIT process.16.05.63.4 On-chip

Ordering number:EN44092SA1830 : PNPEpitaxial Planar Silicon Transistor2SC4734 ; NPN Triple Diffused Planar Silicon Transistor2SA1830/2SC4734High-Voltage Driver ApplicationsFeatures Package Dimensions Large current capacity (IC=2A).unit:mm High breakdown voltage (VCEO 400V).2084A Possible to offer the 2SA1830/2SC4734 devices in a[2SA1830/2SC4734]tape reel pack

Ordering number:EN3877PNP/NPN Epitaxial Planar Silicon Transistors2SA1825/2SC472950V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2084[2SA1825/2SC4729]Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce

Ordering number:EN3666ANPN Triple Diffused Planar Silicon Transistor2SC4770Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4770] Adoption of MBIT process.16.05.63.43.12.82

Ordering number:EN3687NPN Triple Diffused Planar Silicon Transistor2SC4709High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (Cob typ=1.3pF).2010C Wide ASO.[2SC4709] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Co

Preliminary Datasheet R07DS0275EJ04002SC4702 (Previous: REJ03G0729-0300)Rev.4.00Silicon NPN Epitaxial Mar 28, 2011Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Note: Marking is XV

DATA SHEETNPN SILICON EPITAXIAL TRANSISTOR2SC4783NPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor.0.3 0.05 0.1+0.10.05FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V30 to 0.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)2 1Collector to Base Voltage VCBO 60 V0.2+0.1

DATA SHEETNPN SILICON RF TRANSISTOR2SC4703NPN EPITAXIAL SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER3-PIN POWER MINIMOLDDESCRIPTIONThe 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC47741) Very low output-on resistance (Ron). 2) Low capacitance. 1.252.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 12 VCollector-emitter voltage VCEO 6 V0.1Min.Emitter-base voltage VEBO 3 VE

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC4774DatasheetHigh frequency amplifier transistor, RF switching (6V, 50mA)lOutlinel SOT-323 Parameter Value SC-70 VCEO6VIC50mAUMT3 lFeatures lInner circuitl l1)Very Low output-on resistance (Ron).2)Low capacitance.lApplicationlHIGH FREQUENCY AMPLIFIER

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage

Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)

Transistor2SC4755Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching. 1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)

Transistor2SC4755Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching. 1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)

Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage

Transistor2SC4767Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f=175MHz).0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.11.27 1.27Collector

2SC4714 NPN Unit: mm10.5 0.54.5 0.29.5 0.21.4 0.18.0 0.2 VCEO Cob 3.7 0.1 (TC=25C)1.4 0.12.5 0.2 0.8

Transistor2SC4787Silicon NPN epitaxial planer typeFor intermediate frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)

Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max

Transistor2SC4782Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High-speed switching.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Max

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1TO-220F*Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin AssignmentPackage Packing Normal Lead Free Plating 1 2 32SC4793-x-TF3-T 2SC4793L-x-TF3-T T

UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47L: Lead Free

2SC4797Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4791Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4791Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage

2SC4747Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCBO = 1500 V High speed switchingtf 0.3 sOutlineTO-3PFM1. Base 2. Collector 3. Emitter1232SC4747Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1500 VCollector to emitter volta

2SC4796Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High speed switchingtf 0.6 s High breakdown voltageVCBO = 1700 V Isolated packageTO3PFM1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4745Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputFeatureTO-3PFM High speed switchingtf = 0.2 s typ High breakdown voltageVCBO = 1500 V Isolated package; TO-3PFMAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit1231. Base2. CollectorCollector to b

2SC4702Silicon NPN EpitaxialApplicationHigh voltage amplifierFeatures High breakdown voltageVCEO = 300 V Small CobCob = 1.5 pF Typ.OutlineMPAK311. Emitter2. Base23. Collector2SC4702Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO

2SC4789Silicon NPN Triple DiffusedApplication TO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 25 A Suitable for large size CRT Display1. Base2. Collector13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4784Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ. High gain, low noise figurePG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4784Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VColle

2SC4742Silicon NPN Triple DiffusedApplicationCharacter display horizontal deflection outputFeature High breakdown voltageVCES = 1500 V Built-in damper diode typeOutlineTO-3P211. Base ID2. Collector (Flange) 3. Emitter13232SC4742Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCES 1500 VEmitter to

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol Abs

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4706 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum abso

2SC4706Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit0.24.80.415.6VCBO 900 V ICBO VCB=800V 100max A 0.19.6 2.0VCEO 600 V

2SC4738NPN TRANSISTOR3P b Lead(Pb)-Free12FEATURES:High voltage and high current SOT-523(SC-75)Excellent hFE linearity High hFEComplementary to 2SA1832 MAXIMUM RATINGS (TA=25C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC

NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEOCEO 2SA1837 Complementary to 2SA1937 High transition frequency :fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d

RoHS RoHS 2SC4793AFSEMICONDUCTORNell High Power ProductsHigh Frequency NPN Power Transistor1A/230V/20WFEATURESHigh transition frequency:fT = 100MHz (typ.)Complementary to 2SA1837AFTO-220F package which can be BCEinstalled to the heat sink with one screwTO-220F APPLICATIONS(2SC4793AF)Power amplifierDriver stage amplifier (2)CB(1)NPNE(3)ABSOLUT

DIP Type TransistorsTransistorsNPN Transistors2SC4793 FeaturesTO-220MF Units:mm High collector voltageVCEO=230V (min) Complementary to 2SA1837 High transition frequency :fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230V Collector - Emitter Voltage VCEO 230 Emitt

SMD Type TransistorsNPN Transistors2SC4705SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC4738SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 High Voltage and Current High DC Current Gain Small Package3 Complementary to 2SA18320.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN Transistors2SC4703SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

SMD Type TransistorsNPN Transistors2SC4702SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=300V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle

SMD Type TransistorsNPN Transistors2SC4782SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll

CHENMKO ENTERPRISE CO.,LTD2SC4774GPSURFACE MOUNT High frequency amplifier TransistorVOLTAGE 6 Volts CURRENT 50 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESC-70/SOT-323* Surface mount package. (SC-70/SOT-323)* Low saturation voltage VCE(sat)=0.3V(max.)* Low cob. Cob=1.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.0.65

442SC4793 NPN 4 Silicon NPN Triple Diffused Transistor APPLICATIONS 4 Power Amplifier Applications FEATURES VCEO=230V (min) High collector voltageVCEO=230V (min) 2SA1837

Silicon PNP transistorPower Amplifier Applications Complementary to 2SA1837 High collector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operatin

2SC4793Minos Silicon NPNTriple diffusionType2SC4793Power Amplifier ApplicationsComplementaryto 2SA1837Highcollector voltage:VCEO=230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4759DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4761DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4764DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS

isc Silicon NPN Power Transistor 2SC4793DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SA1837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4757DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4763DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4799DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsAB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4762DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4747DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4744DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4703DESCRIPTIONLow Distortion at Low Supply Voltage.IM 55 dB TYP., IM 76 dB TYP.2-3-@V = 5 V, I = 50 mA, V = 105dB/75CE C O100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion ,low noise RF amplifier operatingwith

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4796DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SC4706DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4745DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4746DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4766DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4743DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4758DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power s

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4765DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution display.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4769DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection

isc Product Specificationisc Silicon NPN Power Transistor 2SC4789DESCRIPTIONSilicon NPN triple diffusedHigh Switching SpeedHigh Breakdown VoltageHigh speed switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deffection outputSuitable for large size CRT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4742DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4770DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLUTE MAXI