All Transistors. 2SC47 Datasheet

 

2SC47 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC47

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.72 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

2SC47 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC47 Datasheet (PDF)

1.1. 2sc4774gp.pdf Size:118K _update

2SC47
2SC47

CHENMKO ENTERPRISE CO.,LTD 2SC4774GP SURFACE MOUNT High frequency amplifier Transistor VOLTAGE 6 Volts CURRENT 50 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-70/SOT-323 * Surface mount package. (SC-70/SOT-323) * Low saturation voltage VCE(sat)=0.3V(max.) * Low cob. Cob=1.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. 0.65

1.2. 2sc4793af.pdf Size:171K _update

2SC47
2SC47

RoHS RoHS 2SC4793AF SEMICONDUCTOR Nell High Power Products High Frequency NPN Power Transistor 1A/230V/20W FEATURES High transition frequency: fT = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be B C E installed to the heat sink with one screw TO-220F APPLICATIONS (2SC4793AF) Power amplifier Driver stage amplifier (2) C B (1) NPN E(3) ABSOLUT

 1.3. 2sc4738.pdf Size:205K _toshiba

2SC47
2SC47

2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 120~700 • Complementary to 2SA1832 • Small package Absolute Maximu

1.4. 2sc4738ft.pdf Size:138K _toshiba

2SC47
2SC47

2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: I = 150 mA (max) C • High h : h = 120 to 400 FE FE • Excellent h Linearity FE : h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C • Complementary to 2SA1832FT Maximum Rat

 1.5. 2sc4738f.pdf Size:234K _toshiba

2SC47
2SC47

2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 120~400 FE: FE • Complementary to 2SA1832F • Small package Maximu

1.6. 2sc4707.pdf Size:172K _toshiba

2SC47
2SC47



1.7. 2sc4754.pdf Size:217K _toshiba

2SC47
2SC47



1.8. 2sc4781.pdf Size:120K _toshiba

2SC47
2SC47



1.9. 2sc4793.pdf Size:111K _toshiba

2SC47
2SC47

2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO

1.10. 2sc4731.pdf Size:52K _sanyo

2SC47
2SC47

Ordering number:ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applicaions. 2084B [2SA1827/2SC4731] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Low collector-to-emitter saturation voltage. High Gain-Ba

1.11. 2sc4729.pdf Size:143K _sanyo

2SC47
2SC47

Ordering number:EN3877 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1825/2SC4729 50V/8A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2084 [2SA1825/2SC4729] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Excellent l

1.12. 2sc4734.pdf Size:155K _sanyo

2SC47
2SC47

Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions Large current capacity (IC=2A). unit:mm High breakdown voltage (VCEO? 400V). 2084A Possible to offer the 2SA1830/2SC4734 devices in a [2SA1830/2SC4734] tape reel packaging, w

1.13. 2sc4727.pdf Size:108K _sanyo

2SC47
2SC47

Ordering number:EN3871 NPN Epitaxial Planar Silicon Transistor 2SC4727 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT process. unit:mm Low saturation voltage. 2084B Fast switching speed. [2SC4727] Large current capacity. 4.5 1.9 2.6 10.5 It is possible to make appliances more compact 1.2 1.4 because its height on board is 9.5mm. Effec

1.14. 2sc4730.pdf Size:141K _sanyo

2SC47
2SC47

Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2084 [2SA1826/2SC4730] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Excellent

1.15. 2sc4770.pdf Size:98K _sanyo

2SC47
2SC47

Ordering number:EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4770] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0

1.16. 2sc4735.pdf Size:109K _sanyo

2SC47
2SC47

Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions Large power type such as PC=1.5W when used unit:mm without heatsink. 2084B It is possible to make appliances more compact [2SC4735] because its height on board is 9.5mm. 4.5 1.9 2.6 Effective in automatic inserting and counting stocked 1

1.17. 2sc4710.pdf Size:101K _sanyo

2SC47
2SC47

Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation package. 3.2

1.18. 2sc4728.pdf Size:144K _sanyo

2SC47
2SC47

Ordering number:EN3872 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1824/2SC4728 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2084 [2SA1824/2SC4728] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Excellent l

1.19. 2sc4705.pdf Size:102K _sanyo

2SC47
2SC47

Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications Package Dimensions Low-frequency general-purpose amplifier, drivers, unit:mm muting circuits. 2038A [2SC4705] Features 4.5 1.5 1.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat)?

1.20. 2sc4737.pdf Size:41K _sanyo

2SC47
2SC47

Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2084B [2SC4737] 4.5 Features 1.9 2.6 10.5 1.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between collector an

1.21. 2sc4736.pdf Size:104K _sanyo

2SC47
2SC47

Ordering number:EN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Large current (IC=2A). unit:mm Adoption of MBIT process. 2084B High DC current gain (hFE=800 to 3200). [2SC4736] Low collector-to-emitter saturation voltage 4.5 1.9 2.6 (VCE(sat)? 0.5V). 10.5 1.2 1.4 High e

1.22. 2sc4710ls.pdf Size:29K _sanyo

2SC47
2SC47

Ordering number : ENN3688B 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2SC4710LS 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=2100V). unit : mm Small Cob(typical Cob=1.3pF). 2079D Wide ASO. [2SC4710LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 Full isola

1.23. 2sc4769.pdf Size:100K _sanyo

2SC47
2SC47

Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4769] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper d

1.24. 2sc4709.pdf Size:99K _sanyo

2SC47
2SC47

Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit:mm Small Cob (Cob typ=1.3pF). 2010C Wide ASO. [2SC4709] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector

1.25. r07ds0275ej 2sc4702-1.pdf Size:99K _renesas

2SC47
2SC47

Preliminary Datasheet R07DS0275EJ0400 2SC4702 (Previous: REJ03G0729-0300) Rev.4.00 Silicon NPN Epitaxial Mar 28, 2011 Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Note: Marking is XV. Absolut

1.26. 2sc4783.pdf Size:37K _nec

2SC47
2SC47

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain: hFE2 = 200 TYP. High voltage: VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1 0 Collec

1.27. 2sc4703.pdf Size:47K _nec

2SC47
2SC47

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mou

1.28. 2sc4774 2sc4713k.pdf Size:156K _rohm

2SC47
2SC47

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K ?Features ?Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC4774 2) Low capacitance. 2.0 0.9 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit (2) (1) Collector-base voltage VCBO 12 V 0.65 0.65 0.15 Collector-emitter voltage VCEO 6 V 1.3 Emitter-bas

1.29. 2sc5661 2sc4725 2sc4082 2sc3837k.pdf Size:187K _rohm

2SC47
2SC47

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 U

1.30. 2sc4725.pdf Size:187K _rohm

2SC47
2SC47

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 U

1.31. 2sc4726.pdf Size:147K _rohm

2SC47
2SC47

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2S

1.32. 2sc5662 2sc4726 2sc4083 2sc3838k.pdf Size:147K _rohm

2SC47
2SC47

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2S

1.33. 2sc4787.pdf Size:40K _panasonic

2SC47
2SC47

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Par

1.34. 2sc4715 e.pdf Size:37K _panasonic

2SC47
2SC47

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

1.35. 2sc4755.pdf Size:42K _panasonic

2SC47
2SC47

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

1.36. 2sc4755 e.pdf Size:46K _panasonic

2SC47
2SC47

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

1.37. 2sc4715.pdf Size:34K _panasonic

2SC47
2SC47

Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO

1.38. 2sc4782.pdf Size:42K _panasonic

2SC47
2SC47

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Rati

1.39. 2sc4782 e.pdf Size:46K _panasonic

2SC47
2SC47

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Rati

1.40. 2sc4767 e.pdf Size:49K _panasonic

2SC47
2SC47

Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Unit: mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f=175MHz). 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to emitter

1.41. 2sc4787 e.pdf Size:44K _panasonic

2SC47
2SC47

Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Par

1.42. 2sc4774.pdf Size:234K _utc

2SC47
2SC47

UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47 L: Lead Free G:

1.43. 2sc4793.pdf Size:46K _utc

2SC47
2SC47

UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number:2SC4793L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC4793-x-TF3-T 2SC4793L-x-TF3-T TO-2

1.44. 2sc4742.pdf Size:32K _hitachi

2SC47
2SC47

2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCES = 1500 V Built-in damper diode type Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SC4742 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base vol

1.45. 2sc4702.pdf Size:31K _hitachi

2SC47
2SC47

2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Coll

1.46. 2sc4745.pdf Size:299K _hitachi

2SC47
2SC47

2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3PFM High speed switching tf = 0.2 s typ High breakdown voltage VCBO = 1500 V Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit 1 2 3 1. Base 2. Collector Collector to base voltage VCBO 1500 V 3. Emitter

1.47. 2sc4797.pdf Size:20K _hitachi

2SC47
2SC47

2SC4797 Silicon NPN Triple Diffused Application TO3PFM TV / character display horizontal deflection output Features High speed switching tf ? 0.6 s High breakdown voltage VCBO = 1700 V Isolated package TO3PFM 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base

1.48. 2sc4784.pdf Size:69K _hitachi

2SC47
2SC47

2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to

1.49. 2sc4747.pdf Size:32K _hitachi

2SC47
2SC47

2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCBO = 1500 V High speed switching tf ? 0.3 s Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 800

1.50. 2sc4791.pdf Size:70K _hitachi

2SC47
2SC47

2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15

1.51. 2sc4744.pdf Size:378K _hitachi

2SC47
2SC47

1.52. 2sc4796.pdf Size:20K _hitachi

2SC47
2SC47

2SC4796 Silicon NPN Triple Diffused Application TO3PFM TV / character display horizontal deflection output Features High speed switching tf ? 0.6 s High breakdown voltage VCBO = 1700 V Isolated package TO3PFM 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base

1.53. 2sc4789.pdf Size:20K _hitachi

2SC47
2SC47

2SC4789 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A Suitable for large size CRT Display 1. Base 2. Collector 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit

1.54. 2sc4742.pdf Size:107K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings

1.55. 2sc4763.pdf Size:106K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolu

1.56. 2sc4770.pdf Size:51K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4770 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolut

1.57. 2sc4706.pdf Size:190K _jmnic

2SC47
2SC47

JMnic Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBO

1.58. 2sc4747.pdf Size:90K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION ·With TO-3PFM package ·High speed switching ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDI

1.59. 2sc4762.pdf Size:114K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolu

1.60. 2sc4764.pdf Size:103K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolu

1.61. 2sc4793.pdf Size:38K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4793 DESCRIPTION ·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (T

1.62. 2sc4769.pdf Size:119K _jmnic

2SC47
2SC47

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML)

1.63. 2sc4706.pdf Size:23K _sanken-ele

2SC47

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit 0.2 4.8 0.4 15.6 VCBO 900 V ICBO VCB=800V 100max A 0.1 9.6 2.0 VCEO 600 V IEBO VEB

1.64. 2sc4742.pdf Size:164K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4742 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Built-in damper diode Ў¤ High breakdown voltage APPLICATIONS Ў¤ Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolu

1.65. 2sc4761.pdf Size:299K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4761 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.66. 2sc4763.pdf Size:160K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4763 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High speed ,high speed Ў¤ Low saturation voltage Ў¤ Bult-in damper diode APPLICATIONS Ў¤ Horizontal deflection output for medium resolution display PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

1.67. 2sc4745.pdf Size:367K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4745 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector

1.68. 2sc4770.pdf Size:175K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4770 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed APPLICATIONS Ў¤ Ultrahigh-definition color display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION A

1.69. 2sc4706.pdf Size:153K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage switching transistor APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(

1.70. 2sc4744.pdf Size:329K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Vo

1.71. 2sc4762.pdf Size:159K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4762 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage,high speed Ў¤ Low saturation voltage Ў¤ Bult-in damper diode APPLICATIONS Ў¤ Horizontal deflection output for medium resolution display PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO

1.72. 2sc4757.pdf Size:334K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.73. 2sc4764.pdf Size:158K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4764 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High speed Ў¤ High voltage Ў¤ Low saturation voltage Ў¤ Bult-in damper diode APPLICATIONS Ў¤ Horizontal deflection output for medium resolution display PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO

1.74. 2sc4793.pdf Size:153K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4793 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SA1837 Ў¤ High transition frequency APPLICATIONS Ў¤ Power amplifier applications Ў¤ Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maxi

1.75. 2sc4759.pdf Size:302K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.76. 2sc4758.pdf Size:336K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.77. 2sc4769.pdf Size:175K _inchange_semiconductor

2SC47
2SC47

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4769 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ Ultrahigh-definition color display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symb

1.78. 2sc4746.pdf Size:284K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector

1.79. 2sc4765.pdf Size:325K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4765 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for medium resolution display. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

1.80. 2sc4743.pdf Size:333K _inchange_semiconductor

2SC47
2SC47

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4743 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector

1.81. 2sc4738.pdf Size:154K _wietron

2SC47
2SC47

2SC4738 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES: High voltage and high current SOT-523(SC-75) Excellent hFE linearity High hFE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current –Continuous IC 150

1.82. 2sc4793d.pdf Size:479K _blue-rocket-elect

2SC47
2SC47

2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 特征频率高,与 2SA1837D(BR3CA1837D)互补。 High fT, complementary pair with 2SA1837D(BR3CA1837D). 用途 / Applications 用于一般功率放大和驱动级放大。 Power amplifier and d

1.83. 2sc4738.pdf Size:1139K _kexin

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SMD Type Transistors NPN Transistors 2SC4738 SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 ■ Features 2 1 ● High Voltage and Current ● High DC Current Gain ● Small Package 3 ● Complementary to 2SA1832 0.3±0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

1.84. 2sc4702.pdf Size:560K _kexin

2SC47
2SC47

SMD Type Transistors NPN Transistors 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle

1.85. 2sc4782.pdf Size:938K _kexin

2SC47
2SC47

SMD Type Transistors NPN Transistors 2SC4782 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll

1.86. 2sc4705.pdf Size:1102K _kexin

2SC47
2SC47

SMD Type Transistors NPN Transistors 2SC4705 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.2A ● Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

1.87. 2sc4793.pdf Size:430K _kexin

2SC47
2SC47

DIP Type Transistors Transistors NPN Transistors 2SC4793 ■ Features TO-220MF 单位Units:mm ●High collector voltage:VCEO=230V (min) ●Complementary to 2SA1837 ●High transition frequency :fT=100MHz(Typ.) ●RoHS product ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230 V Collector - Emitter Voltage VCEO 230 Emitt

1.88. 2sc4703.pdf Size:1055K _kexin

2SC47
2SC47

SMD Type Transistors NPN Transistors 2SC4703 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.15A ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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