2SC47 datasheet, аналоги, основные параметры
Наименование производителя: 2SC47 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.6 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.72 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
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Аналоги (замена) для 2SC47
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2SC47 даташит
2sc4738ft.pdf
2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit mm High Voltage VCEO = 50 V High Current I = 150 mA (max) C High h h = 120 to 400 FE FE Excellent h Linearity FE h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SA1832FT Maximum Rat
2sc4793.pdf
2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1837 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO
2sc4738.pdf
2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 700 Complementary to 2SA1832 Small package Absolute Maximu
2sc4738f.pdf
2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 150 mA (max) Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 120 400 FE FE Complementary to 2SA1832F Small package Maximu
2sc4710.pdf
Ordering number EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation packag
2sc4735.pdf
Ordering number EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions Large power type such as PC=1.5W when used unit mm without heatsink. 2084B It is possible to make appliances more compact [2SC4735] because its height on board is 9.5mm. 4.5 1.9 2.6 Effective in automatic inserting and counting sto
2sc4728.pdf
Ordering number EN3872 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1824/2SC4728 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2084 [2SA1824/2SC4728] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4737.pdf
Ordering number ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2084B [2SC4737] 4.5 Features 1.9 2.6 10.5 1.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle
2sc4730.pdf
Ordering number EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2084 [2SA1826/2SC4730] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exc
2sc4705.pdf
Ordering number EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications Package Dimensions Low-frequency general-purpose amplifier, drivers, unit mm muting circuits. 2038A [2SC4705] Features 4.5 1.5 1.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage VCE
2sc4731.pdf
Ordering number ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applicaions. 2084B [2SA1827/2SC4731] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Low collector-to-emitter saturation voltage. High G
2sc4736.pdf
Ordering number EN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Large current (IC=2A). unit mm Adoption of MBIT process. 2084B High DC current gain (hFE=800 to 3200). [2SC4736] Low collector-to-emitter saturation voltage 4.5 1.9 2.6 (VCE(sat) 0.5V). 10.5 1.2 1.4
2sc4727.pdf
Ordering number EN3871 NPN Epitaxial Planar Silicon Transistor 2SC4727 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm Low saturation voltage. 2084B Fast switching speed. [2SC4727] Large current capacity. 4.5 1.9 2.6 10.5 It is possible to make appliances more compact 1.2 1.4 because its height on board is 9.5mm.
2sc4769.pdf
Ordering number EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4769] Adoption of MBIT process. 16.0 5.6 3.4 On-chip
2sc4734.pdf
Ordering number EN4409 2SA1830 PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions Large current capacity (IC=2A). unit mm High breakdown voltage (VCEO 400V). 2084A Possible to offer the 2SA1830/2SC4734 devices in a [2SA1830/2SC4734] tape reel pack
2sc4729.pdf
Ordering number EN3877 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1825/2SC4729 50V/8A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2084 [2SA1825/2SC4729] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Exce
2sc4770.pdf
Ordering number EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4770] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2
2sc4709.pdf
Ordering number EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (Cob typ=1.3pF). 2010C Wide ASO. [2SC4709] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Co
2sc4783.pdf
DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC4783 is NPN silicon epitaxial transistor. 0.3 0.05 0.1+0.1 0.05 FEATURES High DC current gain hFE2 = 200 TYP. High voltage VCEO = 50 V 3 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2 1 Collector to Base Voltage VCBO 60 V 0.2+0.1
2sc4703.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface
2sc4774 2sc4713k.pdf
2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC4774 1) Very low output-on resistance (Ron). 2) Low capacitance. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V 0.1Min. Emitter-base voltage VEBO 3 V E
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and
2sc4715 e.pdf
Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage
2sc4787.pdf
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)
2sc4755 e.pdf
Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C)
2sc4755.pdf
Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C)
2sc4715.pdf
Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage
2sc4767 e.pdf
Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f=175MHz). 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 36 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector
2sc4714.pdf
2SC4714 NPN Unit mm 10.5 0.5 4.5 0.2 9.5 0.2 1.4 0.1 8.0 0.2 VCEO Cob 3.7 0.1 (TC=25 C) 1.4 0.1 2.5 0.2 0.8
2sc4787 e.pdf
Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C)
2sc4782 e.pdf
Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max
2sc4782.pdf
Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Max
2sc4793.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications 1 TO-220F *Pb-free plating product number 2SC4793L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC4793-x-TF3-T 2SC4793L-x-TF3-T T
2sc4774.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) FEATURES * Very low output-on resistance (RON). * Low capacitance. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4774L-AL3-R 2SC4774G-AL3-R SOT-323 E B C Tape Reel MARKING C47 L Lead Free
2sc4791.pdf
2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage
2sc4747.pdf
2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCBO = 1500 V High speed switching tf 0.3 s Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter volta
2sc4745.pdf
2SC4745 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Feature TO-3PFM High speed switching tf = 0.2 s typ High breakdown voltage VCBO = 1500 V Isolated package; TO-3PFM Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit 1 2 3 1. Base 2. Collector Collector to b
2sc4702.pdf
2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO
2sc4784.pdf
2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ. High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Colle
2sc4742.pdf
2SC4742 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature High breakdown voltage VCES = 1500 V Built-in damper diode type Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SC4742 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to
2sc4764.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4764 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs
2sc4793.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings
2sc4763.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4763 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs
2sc4762.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4762 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type APPLICATIONS Horizontal deflection output for medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Abs
2sc4747.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
2sc4706.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sc4769.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P
2sc4742.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4742 DESCRIPTION With TO-3PN package Built-in damper diode High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati
2sc4770.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4770 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum abso
2sc4706.pdf
2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit 0.2 4.8 0.4 15.6 VCBO 900 V ICBO VCB=800V 100max A 0.1 9.6 2.0 VCEO 600 V
2sc4738.pdf
2SC4738 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES High voltage and high current SOT-523(SC-75) Excellent hFE linearity High hFE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC
2sc4793.pdf
NPN Silicon NPN Triple Diffused Transistor R 2SC4793 APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO 2SA1837 Complementary to 2SA1937 High transition frequency fT=100MHz(Typ.) f T=100MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Mark
2sc4793d.pdf
2SC4793D(BR3DA4793D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , 2SA1837D(BR3CA1837D) High fT, complementary pair with 2SA1837D(BR3CA1837D). / Applications Power amplifier and d
2sc4793af.pdf
RoHS RoHS 2SC4793AF SEMICONDUCTOR Nell High Power Products High Frequency NPN Power Transistor 1A/230V/20W FEATURES High transition frequency fT = 100MHz (typ.) Complementary to 2SA1837AF TO-220F package which can be B C E installed to the heat sink with one screw TO-220F APPLICATIONS (2SC4793AF) Power amplifier Driver stage amplifier (2) C B (1) NPN E(3) ABSOLUT
2sc4793.pdf
DIP Type Transistors Transistors NPN Transistors 2SC4793 Features TO-220MF Units mm High collector voltage VCEO=230V (min) Complementary to 2SA1837 High transition frequency fT=100MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 230 V Collector - Emitter Voltage VCEO 230 Emitt
2sc4705.pdf
SMD Type Transistors NPN Transistors 2SC4705 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
2sc4738.pdf
SMD Type Transistors NPN Transistors 2SC4738 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 High Voltage and Current High DC Current Gain Small Package 3 Complementary to 2SA1832 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
2sc4703.pdf
SMD Type Transistors NPN Transistors 2SC4703 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V
2sc4702.pdf
SMD Type Transistors NPN Transistors 2SC4702 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle
2sc4782.pdf
SMD Type Transistors NPN Transistors 2SC4782 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Coll
2sc4774gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC4774GP SURFACE MOUNT High frequency amplifier Transistor VOLTAGE 6 Volts CURRENT 50 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-70/SOT-323 * Surface mount package. (SC-70/SOT-323) * Low saturation voltage VCE(sat)=0.3V(max.) * Low cob. Cob=1.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. 0.65
2sc4793.pdf
Silicon PNP transistor Power Amplifier Applications Complementary to 2SA1837 High collector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin
2sc4793.pdf
2SC4793 Minos Silicon NPNTriple diffusionType 2SC4793 Power Amplifier Applications Complementaryto 2SA1837 Highcollector voltage VCEO=230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions
2sc4759.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s
2sc4761.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4761 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s
2sc4764.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4764 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS
2sc4793.pdf
isc Silicon NPN Power Transistor 2SC4793 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SA1837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4757.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s
2sc4763.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4763 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS
2sc4799.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4799 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB
2sc4762.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4762 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS
2sc4747.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4747 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4744.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE
2sc4703.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4703 DESCRIPTION Low Distortion at Low Supply Voltage. IM 55 dB TYP., IM 76 dB TYP. 2- 3- @V = 5 V, I = 50 mA, V = 105dB /75 CE C O 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion ,low noise RF amplifier operating with
2sc4796.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4796 DESCRIPTION High Breakdown Voltage- V = 1700V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI
2sc4706.pdf
isc Silicon NPN Power Transistor 2SC4706 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc4745.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4745 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4746.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4746 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
2sc4766.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4766 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS
2sc4743.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc4758.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching power s
2sc4765.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4765 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for medium resolution display. ABS
2sc4769.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4769 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection
2sc4789.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC4789 DESCRIPTION Silicon NPN triple diffused High Switching Speed High Breakdown Voltage High speed switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deffection output Suitable for large size CRT
2sc4742.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4742 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CES Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25
2sc4770.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4770 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXI
Другие транзисторы: 2SC468A, 2SC468H, 2SC469, 2SC4690, 2SC4690O, 2SC4690R, 2SC4691, 2SC4692, TIP41C, 2SC470, 2SC4704, 2SC4704B, 2SC4704C, 2SC4707, 2SC4708, 2SC4708B, 2SC4708C
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
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