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2SC566 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC566
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 350 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO72

 Búsqueda de reemplazo de transistor bipolar 2SC566

 

2SC566 Datasheet (PDF)

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2sc5665.pdf pdf_icon

2SC566

Ordering number ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2106A fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0 0.1 1 2 0.1 0.2 0.

 0.2. Size:33K  sanyo
2sa2031 2sc5669.pdf pdf_icon

2SC566

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0

 0.3. Size:87K  nec
2sc5668.pdf pdf_icon

2SC566

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f

 0.4. Size:86K  nec
2sc5667.pdf pdf_icon

2SC566

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V,

Otros transistores... 2SC561 , 2SC562 , 2SC562Z , 2SC563 , 2SC563A , 2SC563Z , 2SC564 , 2SC565 , 2SC945 , 2SC567 , 2SC568 , 2SC568M , 2SC569 , 2SC57 , 2SC570 , 2SC571 , 2SC572 .

History: KT639A1 | KRA313V | KT610B

 

 
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