All Transistors. 2SC566 Equivalents Search

 

2SC566 Specs and Replacement


   Type Designator: 2SC566
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 350 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO72

 2SC566 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC566 detailed specifications

 0.1. Size:36K  sanyo
2sc5665.pdf pdf_icon

2SC566

Ordering number ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2106A fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0 0.1 1 2 0.1 0.2 0.... See More ⇒

 0.2. Size:33K  sanyo
2sa2031 2sc5669.pdf pdf_icon

2SC566

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0 ... See More ⇒

 0.3. Size:87K  nec
2sc5668.pdf pdf_icon

2SC566

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f ... See More ⇒

 0.4. Size:86K  nec
2sc5667.pdf pdf_icon

2SC566

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, ... See More ⇒

Detailed specifications: 2SC561 , 2SC562 , 2SC562Z , 2SC563 , 2SC563A , 2SC563Z , 2SC564 , 2SC565 , 2SC945 , 2SC567 , 2SC568 , 2SC568M , 2SC569 , 2SC57 , 2SC570 , 2SC571 , 2SC572 .

History: 2SD865 | TP706

Keywords - 2SC566 transistor specs

 2SC566 cross reference
 2SC566 equivalent finder
 2SC566 lookup
 2SC566 substitution
 2SC566 replacement

 

 
Back to Top

 


 
.