2SD341H Todos los transistores

 

2SD341H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD341H
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 115 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.8 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD341H

 

2SD341H Datasheet (PDF)

 9.1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 9.2. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 9.3. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 9.4. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

MOSTRAR MÁS

Otros transistores... 2SD339 , 2SD339-1 , 2SD339-2 , 2SD34 , 2SD340 , 2SD340-1 , 2SD340-2 , 2SD341 , BD140 , 2SD342 , 2SD343 , 2SD344 , 2SD345 , 2SD346 , 2SD347 , 2SD348 , 2SD349 .

History: 2SC2984 | 2SC2905 | KD606 | K2122B | BDT62CF | 2SD23 | GCN53

 

 
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