2SD341H Datasheet. Specs and Replacement

Type Designator: 2SD341H  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 115 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 180 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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2SD341H datasheet

 9.1. Size:188K  inchange semiconductor

 2sd343.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

 9.2. Size:180K  inchange semiconductor

 2sd348.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl... See More ⇒

 9.3. Size:199K  inchange semiconductor

 2sd347.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a... See More ⇒

 9.4. Size:188K  inchange semiconductor

 2sd345.pdf pdf_icon

2SD341H

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli... See More ⇒

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Detailed specifications: 2SD339, 2SD339-1, 2SD339-2, 2SD34, 2SD340, 2SD340-1, 2SD340-2, 2SD341, BD140, 2SD342, 2SD343, 2SD344, 2SD345, 2SD346, 2SD347, 2SD348, 2SD349

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