3N110 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3N110
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12 MHz
Paquete / Cubierta: TO72
Búsqueda de reemplazo de 3N110
3N110 Datasheet (PDF)
13n110a.pdf
IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52
ixth13n110.pdf
IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52
Otros transistores... 3N102 , 3N103 , 3N104 , 3N105 , 3N106 , 3N107 , 3N108 , 3N109 , S9013 , 3N111 , 3N112 , 3N113 , 3N114 , 3N115 , 3N116 , 3N117 , 3N118 .
History: 2N785 | BD196 | 2SC3540
History: 2N785 | BD196 | 2SC3540
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