3N110 Datasheet. Specs and Replacement
Type Designator: 3N110 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Package: TO72
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3N110 Substitution
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3N110 datasheet
IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52 ... See More ⇒
IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52 ... See More ⇒
Detailed specifications: 3N102, 3N103, 3N104, 3N105, 3N106, 3N107, 3N108, 3N109, 13005, 3N111, 3N112, 3N113, 3N114, 3N115, 3N116, 3N117, 3N118
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